Beta-In2S3 thin films prepared by the sulpherization of evaporated indium films

Yoosuf Rahana; Kalloor Cheekku Jerome; Antony Aldrin; Manoj Ramachandran; Madambi Kunjukuttan Jayaraj

doi:10.1117/12.520496

12 May 2004 Beta-In₂S₃ thin films prepared by the sulpherization of evaporated indium films

Yoosuf Rahana, Kalloor Cheekku Jerome, Antony Aldrin, Manoj Ramachandran, Madambi Kunjukuttan Jayaraj

Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.520496
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China

Abstract

β-In₂S₃ films were grown on glass and quartz substrates by the rapid heating of metallic indium films in H₂S atmosphere. The effect of sulphurisation temperature and time on the growth of single phase In₂S₃ and its electrical and optical properties have been investigated. The influences of processing parameters on the electrical and optical properties have been studied. The band gaps of In₂S₃ films were in the range 1.9 eV to 2.3eV. All the films exhibit n-type conductivity. The studies on temperature dependence of conductivity indicate a variable range hopping mechanism.

Citation Download Citation

Yoosuf Rahana, Kalloor Cheekku Jerome, Antony Aldrin, Manoj Ramachandran, and Madambi Kunjukuttan Jayaraj "Beta-In₂S₃ thin films prepared by the sulpherization of evaporated indium films", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.520496

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