Block copolymers for optoelectronics

Sam-Shajing Sun; Zhen Fan; Yiqing Wang; Charles Taft; James H. Haliburton; Shahin Maaref; Abram J. Ledbetter; Carl E. Bonner

doi:10.1117/12.520570

Translator Disclaimer

12 May 2004 Block copolymers for opto-electronics

Sam-Shajing Sun, Zhen Fan, Yiqing Wang, Charles Taft, James H. Haliburton, Shahin Maaref, Abram J. Ledbetter, Carl E. Bonner

Author Affiliations +

Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.520570
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China

Abstract

A D(donor)-B(bridge)-A(acceptor)-B(bridge)-type block copolymer system has been developed and preliminarily examined for potential opto-electronic photovoltaic functions. The unique feature of the device includes a primary DBAB-type block copolymer backbone, where D and A are conjugated donor and acceptor polymer blocks, and B is a non-conjugated and flexible chain, a π orbital stacked and conjugated chain self-assembled and ordered "secondary structure", and a donor/acceptor asymmetric layers sandwiched D/A columnar "tertiary structure". This structure is expected to improve photovoltaic power conversion efficiency significantly in comparison to most existing organic or polymeric donor/acceptor binary photovoltaic systems due to the reduction of "exciton loss", the "carrier loss", as well as the "photon loss" via three-dimensional space and energy level optimizations. Preliminary experimental results revealed better morphology and opto-electronic properties of DBAB vs. D/A blends.

Citation Download Citation

Sam-Shajing Sun, Zhen Fan, Yiqing Wang, Charles Taft, James H. Haliburton, Shahin Maaref, Abram J. Ledbetter, and Carl E. Bonner "Block copolymers for opto-electronics", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.520570

ACCESS THE FULL ARTICLE