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12 May 2004 Design and calculation characteristics of a novel diode-pumped long-wavelength vertical-external-cavity surface-emitting semiconductor laser
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Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.523621
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China
Abstract
A novel design of diode-pumped long wavelength vertical-external-cavity surface-emitting semiconductor laser with GaInNAs/GaAs multiple quantum wells at 1.3μm as an active region optically pumped by 980nm diode laser is proposed in this paper. The device design realizes the integrating diode-pumped lasers with long wavelength vertical-cavity surface-emitting laser structure, drawing on the advantages of both. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells is obtained from the calculation results, and the calculation results also predict high output power (>500mW) in this kind of device structure. Finally the thermal characteristic is also considered.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Changling Yan, Li Qin, Shumin Zhang, Jingchang Zhong, Yongqiang Ning, Yun Liu, Lijun Wang, and Huiling Jiang "Design and calculation characteristics of a novel diode-pumped long-wavelength vertical-external-cavity surface-emitting semiconductor laser", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.523621
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