Design and fabrication of PIN photodiode used in PET photon detection

Bingruo Chen; Mu Wu; Dong-Qing Wei; Yang Gui

doi:10.1117/12.522164

12 May 2004 Design and fabrication of PIN photodiode used in PET photon detection

Bingruo Chen, Mu Wu, Dong-Qing Wei, Yang Gui

Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.522164
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China

Abstract

The silicon PIN photodiode is small size and cheap cost, so we hope that it can replace PMT as detector used in PET photon detection. The Si PIN photodiode that is satisfied with detecting PET photon must enhance responsibility for short-wave light, respond to weak signal and operate in high speed. The characteristics of PIN device with single crystal silicon substrate are analyzed, and a PIN photodiode made of epitaxial wafer with high resistivity is presented. By choosing proper configuration and material parameters, the performance of PIN photodiode is improved, and the main photoelectic characteristics of samples have achieved the requirement of design.

Citation Download Citation

Bingruo Chen, Mu Wu, Dong-Qing Wei, and Yang Gui "Design and fabrication of PIN photodiode used in PET photon detection", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.522164

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