Characteristics Of SiO[sub]2[/sub] Films Deposited By Ionized Nozzle-Beam Technique

J. Wong; T.-M. Lu; R. Stump; S. Mehta

doi:10.1117/12.946471

9 April 1985 Characteristics Of SiO₂ Films Deposited By Ionized Nozzle-Beam Technique

J. Wong, T.-M. Lu, R. Stump, S. Mehta

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946471
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

SiO2 films have been deposited on Si wafers at a substrate temperature of 300°C and a pressure of 10^-2 Pa using the Ionized Nozzle-Beam Deposition (INBD) technique. SiO grains were used as the deposition material. The refractive index and infrared absorption spec-trum of the deposited SiO 0 films resembled to those of the SiO₂ films deposited using SiO₂ as the source material. We found that the film quality was improved significantly after a short time furnace annealing (800°C, 10 minutes).

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J. Wong, T.-M. Lu, R. Stump, and S. Mehta "Characteristics Of SiO₂ Films Deposited By Ionized Nozzle-Beam Technique", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946471

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