Paper
9 April 1985 Materials Characterization Tools For Advanced Ion Beam Processes
Michael D. Strathman
Author Affiliations +
Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946483
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
This paper will discuss the application of Rutherford backscattering technology and secondary ion mass spectrometry to advanced ion beam processes. Two particular processes, high current implantation and high energy implantation will be investigated.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael D. Strathman "Materials Characterization Tools For Advanced Ion Beam Processes", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946483
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Ions

Ion implantation

Semiconducting wafers

Silicon

Sputter deposition

Arsenic

Ion beams

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