Paper
9 April 1985 Using Six-Point Probe Meter Models 101 And 101C
James T.C. Chen
Author Affiliations +
Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946489
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States
Abstract
The concept of using the Six-Point-Probe Meter for various cases of sheet resistivity measurements is introduced, its principle is analyzed and the instructions for the applications are presented.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James T.C. Chen "Using Six-Point Probe Meter Models 101 And 101C", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946489
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Semiconducting wafers

Ion implantation

Annealing

Crystals

Head

Wafer testing

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