Wafer Temperature Rise In Rapid Thermal Processing (RTP): A Study Of Chamber Effects And Hulk Silicon Material Parameters

Vijay Basra; Daniel F. Downey

doi:10.1117/12.946473

9 April 1985 Wafer Temperature Rise In Rapid Thermal Processing (RTP): A Study Of Chamber Effects And Hulk Silicon Material Parameters

Vijay Basra, Daniel F. Downey

Author Affiliations +

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946473
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

Unimplanted boron and phosphorous doped bulk silicon wafers were studied for fixed exposures at constant anneal conditions using an infrared graphite source. Effects of different chamber conditions, silicon wafer properties and the pyrometer system were determined. Wafer resistivity changes were investigated. Dopant concentration, as well as wafer type, was found to affect the wafer temperature rise; and, hence, the wafer end point temperatures in significantly different ways. Results of chamber memory effects showed least memory for an infrared graphite source annealing system. Wafer peak temperature data and bulk resistivity changes in multiple annealed wafers indicates that the mechanism of thermal donor annihilation and neutral trap concentration reduction play an active role in both n and p-type silicon. The elimination of wafer to wafer endpoint temperature and chamber memory is demonstrated by wafer temperature feedback control.

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Vijay Basra and Daniel F. Downey "Wafer Temperature Rise In Rapid Thermal Processing (RTP): A Study Of Chamber Effects And Hulk Silicon Material Parameters", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946473

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