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7 June 2004 CMOS active pixel image sensor with in-pixel CDS for high-speed cameras
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This paper presents a high-speed CMOS image sensor of whose frame rate exceeds 2000 frames/s. The pixel includes a photodiode, a charge-transfer amplifier, and circuitry for correlated double sampling (CDS) and global electronic shuttering. Reset noise, which is a major random noise factor, is greatly reduced by the CDS combined with the charge-transfer amplifier. The total number of devices in the pixel is 11 transistors and 2 MOS capacitors. Test circuits were fabricated using a 0.25μm CMOS process. The sensitivity of the 20 x 20μm2 pixel using the floating diffusion capacitor of 6.2fF and the photodiode area of 15 x 12.7μm2 is 34V/lux-sec. At 1000frames/sec, noise level is 2.43mVrms (dark). The noise level and the sensitivity are greatly improved compared with a 3Tr. type APS implemented with the same technology and a previous version of the APS with in-pixel CDS.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toru Inoue, Shinji Takeuchi, and Shoji Kawahito "CMOS active pixel image sensor with in-pixel CDS for high-speed cameras", Proc. SPIE 5301, Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications V, (7 June 2004);


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