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3 June 2004 Study of chalcogenide-glass-based reflecting optical marks
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Proceedings Volume 5310, Optical Security and Counterfeit Deterrence Techniques V; (2004)
Event: Electronic Imaging 2004, 2004, San Jose, California, United States
The new reflecting optical mark is created. This mark has been received by recording of a joint power spectrum (JPS) of a transformed and reference phase masks on a chalcogenide glass As40S40Se20. In order to fabricate the reflecting optical mark, we must choose the optimum exposure of its writing. We have offered the procedure for calculation of such exposure by using the experimental dependence of diffraction efficiency as a function of a chalcogenide glass layer exposure and the analytical equation for the JPS of two phase masks containing rectangular phase elements. This procedure includes the calculation of the correlation peak relative intensity as a function of the JPS interference pattern frequency band that is read by laser beam, and calculation of the dependence "peak relative intensity versus exposure." The proposed reflecting marks allow realizing the quantitative estimation of a secured product authenticity due to producing of a correlation field and realization of the mark's identification procedure. The experimental setups based on an optical Fourier processor architecture were created for writing of reflecting optical marks and their reading and identification. The experimental examinations of dependency between a peak-to-noise ratio and exposure of a chalcogenide glass layer for the series of fabricated reflective marks were carried out. The obtained results were compared with theoretical results.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leonid I. Muravsky, Sergij O. Kostyukevych, Taras I. Voronyak, and Petro E. Shepeliavyi "Study of chalcogenide-glass-based reflecting optical marks", Proc. SPIE 5310, Optical Security and Counterfeit Deterrence Techniques V, (3 June 2004);

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