Analog, Digital And Short Pulse Modulation Of Ultrafast Gallium Aluminum Arsenide Semiconductor Lasers

K. Y. Lau; A. Yariv

doi:10.1117/12.946547

2 April 1985 Analog, Digital And Short Pulse Modulation Of Ultrafast Gallium Aluminum Arsenide Semiconductor Lasers

K. Y. Lau, A. Yariv

Proceedings Volume 0533, Ultrashort Pulse Spectroscopy and Applications; (1985) https://doi.org/10.1117/12.946547
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

Semiconductor lasers are potentially devices of great importance for optical transmission as well as short pulse generation for various sampling, characteration and dispersion measurements. Since semiconductor lasers are currently driven devices, it is relatively easy to modulate the optical output and to generate short pulses, on the order of lOps long, by directly modulating the injection current into the laser. This paper will present some recent developments in injection lasers which are capable of being analog or digitally mod-ulated at rates up to lOGHz, as well as generating short optical pulses at repetition rates from several hundred megahertz to tens of gigahertz.

Citation Download Citation

K. Y. Lau and A. Yariv "Analog, Digital And Short Pulse Modulation Of Ultrafast Gallium Aluminum Arsenide Semiconductor Lasers", Proc. SPIE 0533, Ultrashort Pulse Spectroscopy and Applications, (2 April 1985); https://doi.org/10.1117/12.946547

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