Synthesis and spectroscopic properties of Cr-doped ZnS crystalline thin films

Shengyaun Wang; Sergey B. Mirov; Vladimir V. Fedorov; Renato P. Camata

doi:10.1117/12.525899

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8 July 2004 Synthesis and spectroscopic properties of Cr-doped ZnS crystalline thin films

Shengyaun Wang, Sergey B. Mirov, Vladimir V. Fedorov, Renato P. Camata

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Proceedings Volume 5332, Solid State Lasers XIII: Technology and Devices; (2004) https://doi.org/10.1117/12.525899
Event: Lasers and Applications in Science and Engineering, 2004, San Jose, Ca, United States

Abstract

It is demonstrated that pulsed laser deposition is a promising "alternative route" for synthesis of middle infrared laser media based on chromium doped ZnS crystalline thin films with a precisely controllable concentration of dopant. The deposition rate and thickness of the thin films synthesized in our experiments varied for 0.017 to 0.109 nm per pulse and 200 nm up to 12 μm, respectively, depending on the laser energy density, number of pulses, and target-substrate distance. Cr concentration in the target material and grown thin film measured by different techniques were very close to each other for a dynamic range of Cr concentration from ~ 10¹⁹ to 3.5 × 10²⁰ cm^-3. Thin film features luminescence band which is similar to the band in bulk crystal (slightly blue-shifted). The emission lifetime of Cr²⁺: ZnS films with Cr²⁺ concentration of ~2 × 10¹⁹ cm^-3 was measured to be ~3 μs. The emission lifetime was shortened to 1 μs for 1.8 × 10²⁰ cm^-3and to 0.67 μs for 3.5 × 10²⁰ cm^-3concentration of chromium due to the concentration quenching. Spectroscopic study shows that Cr²⁺:ZnS thin films synthesized by pulsed laser deposition are promising for middle infrared lasing.

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Shengyaun Wang, Sergey B. Mirov, Vladimir V. Fedorov, and Renato P. Camata "Synthesis and spectroscopic properties of Cr-doped ZnS crystalline thin films", Proc. SPIE 5332, Solid State Lasers XIII: Technology and Devices, (8 July 2004); https://doi.org/10.1117/12.525899

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