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8 July 2004 Synthesis and spectroscopic properties of Cr-doped ZnS crystalline thin films
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Proceedings Volume 5332, Solid State Lasers XIII: Technology and Devices; (2004)
Event: Lasers and Applications in Science and Engineering, 2004, San Jose, Ca, United States
It is demonstrated that pulsed laser deposition is a promising "alternative route" for synthesis of middle infrared laser media based on chromium doped ZnS crystalline thin films with a precisely controllable concentration of dopant. The deposition rate and thickness of the thin films synthesized in our experiments varied for 0.017 to 0.109 nm per pulse and 200 nm up to 12 μm, respectively, depending on the laser energy density, number of pulses, and target-substrate distance. Cr concentration in the target material and grown thin film measured by different techniques were very close to each other for a dynamic range of Cr concentration from ~ 1019 to 3.5 × 1020 cm-3. Thin film features luminescence band which is similar to the band in bulk crystal (slightly blue-shifted). The emission lifetime of Cr2+: ZnS films with Cr2+ concentration of ~2 × 1019 cm-3 was measured to be ~3 μs. The emission lifetime was shortened to 1 μs for 1.8 × 1020 cm-3 and to 0.67 μs for 3.5 × 1020 cm-3 concentration of chromium due to the concentration quenching. Spectroscopic study shows that Cr2+:ZnS thin films synthesized by pulsed laser deposition are promising for middle infrared lasing.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shengyaun Wang, Sergey B. Mirov, Vladimir V. Fedorov, and Renato P. Camata "Synthesis and spectroscopic properties of Cr-doped ZnS crystalline thin films", Proc. SPIE 5332, Solid State Lasers XIII: Technology and Devices, (8 July 2004);


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