Paper
30 December 2003 Deep reactive ion etch conditioning recipe
Author Affiliations +
Abstract
Deep Reactive Ion Etch (DRIE) has historically been regarded as a process possessing inherent variable response. These varying responses include etch rate, mask selectivity, etch depth uniformity across the wafer, and the overall profile of the features being etched. Several factors are thought to lend themselves to this observed variation. Among them are process temperature disparities and residual parasitic compounds within the reaction chamber itself. A long term experiment was carried out to examine the statistical difference between DRIE runs with and without a specially defined pre-process conditioning recipe. This recipe was developed with the expectations of serving a twofold effect: the first serving as a “warm-up” of the process chamber to a steady state temperature, and the second being a stripping of residual organic compounds within the chamber that might otherwise add variance to the following DRIE process. The pre-process recipe has duration of ~30 minutes. The results of the experiment performed will clearly show that this conditioning recipe run prior to processing reduces the typical variance of DRIE processing.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthew Wasilik and Ning Chen "Deep reactive ion etch conditioning recipe", Proc. SPIE 5342, Micromachining and Microfabrication Process Technology IX, (30 December 2003); https://doi.org/10.1117/12.522941
Lens.org Logo
CITATIONS
Cited by 8 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Deep reactive ion etching

Semiconducting wafers

Plasma

Fluorine

Silicon

Ions

Back to Top