Fabrication of large-area x-rays masks for UDXRL on beryllium using thin film UV lithography and x-ray backside exposure

Josef Kouba; Zhong-Geng Ling; Lin Wang; Yohannes M. Desta; Jost Goettert

doi:10.1117/12.531598

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30 December 2003 Fabrication of large-area x-rays masks for UDXRL on beryllium using thin film UV lithography and x-ray backside exposure

Josef Kouba, Zhong-Geng Ling, Lin Wang, Yohannes M. Desta, Jost Goettert

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Proceedings Volume 5342, Micromachining and Microfabrication Process Technology IX; (2003) https://doi.org/10.1117/12.531598
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States

Abstract

A method to fabricate a high precision X-ray mask for Ultra Deep X-ray Lithography (UDXRL) is presented in this paper by use of a single substrate. Firstly, an 8-μm layer of positive photoresist is patterned on a 500 μm thick beryllium substrate by use of UV lithography and 5 μm gold is electroplated out of a sulfite based commercial plating solution. Secondly, the photoresist is removed and 15 μm of SU-8 is spincoated and baked. The layer of SU-8 is patterned by use of an exposure from the backside of the substrate with a soft X-ray source, followed by post-exposure bake and development. An additional 5 μm layer of gold is electroplated on top of the first gold pattern thereby increasing the total thickness of the absorber on the X-ray mask to 10 μm. After the removal of the SU-8 resist, the second step of the process is repeated by use of a thicker layer of SU-8 (up to 100 μm) to obtain the high-precision and high-aspect ratio absorber pattern. Using this method, the maximum dimensional error of the fabricated gold pattern remains under 1 μm, while the smallest absorber feature size is 10 μm.

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Josef Kouba, Zhong-Geng Ling, Lin Wang, Yohannes M. Desta, and Jost Goettert "Fabrication of large-area x-rays masks for UDXRL on beryllium using thin film UV lithography and x-ray backside exposure", Proc. SPIE 5342, Micromachining and Microfabrication Process Technology IX, (30 December 2003); https://doi.org/10.1117/12.531598

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