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23 December 2003 Automated full-field interferometric characterization of micromachined silicon membrane
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Proceedings Volume 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III; (2003) https://doi.org/10.1117/12.524977
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States
Abstract
Among the current commercial micromachined devices, pressure sensors are by far the most successful and popular products. They work to sense the displacement-induced stresses of a silicon membrane with the thickness at the micro-scale. The miniature dimension of such devices, coupled with the demand of accurate deflection measurement for performance characterization, make suitable metrological tools in immediate need. In this paper, we present a digital micro-holo interferometric method for realizing highly sensitive measurement of the full-field displacement over the global test structure. Through the analysis on the system principles, the pressure-induced membrane deflection are accurately measured, and further determination of strain and stress is accomplished based on the verified FE model. From the obtained stress-pressure relation, the sensitivity of the pressure sensor is thus characterized.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Xu, Xiaoyuan Peng, Jianmin Miao, and Anand K. Asundi "Automated full-field interferometric characterization of micromachined silicon membrane", Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); https://doi.org/10.1117/12.524977
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