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23 December 2003 Reaction-layer fatigue: understanding the limitations of structural silicon
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Proceedings Volume 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III; (2003) https://doi.org/10.1117/12.527465
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States
Abstract
Previous research has attributed the fatigue susceptibility of silicon films to the sequential oxidation of the silicon and environmentally-assisted crack growth solely within the SiO2 surface layer. This “reaction-layer fatigue” mechanism is only significant in thin films where the critical crack size for catastrophic failure can be reached by a crack growing within the oxide layer. Fracture mechanics analyses can provide important insight into the limitations of structural silicon films. In this paper, our current understanding of the reaction-layer fatigue mechanism will be reviewed. Current results suggest that surface oxide layer thicknesses as low as 10-20 nm may induce reaction-layer fatigue when considering failure of the specimen for a crack reaching the silica/silicon interface. In contrast, 3-fold thicker surface oxide layers are required for failure due to a crack within the oxide layer.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher L. Muhlstein and O. N. Pierron "Reaction-layer fatigue: understanding the limitations of structural silicon", Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); https://doi.org/10.1117/12.527465
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