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23 December 2003 The temperature compensation of the silicon piezoresistive pressure sensor using the half-bridge technique
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Proceedings Volume 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III; (2003) https://doi.org/10.1117/12.527387
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States
Abstract
The major factor affecting the high performance applications of the piezoresistive pressure sensor is the temperature dependence of its pressure characteristics. The influence due to temperature variation is manifested as a change in the span, bridge resistance, and offset of the sensor. In order to reduce the thermal drifts of the offset and span of the piezoresistive pressure sensor, a Half-Bridge-Compensating (HBC) technique is presented in this paper. There are many advantages such as the temperature compensation of the sensor (typically lower than 1%), and a simple and low cost application circuit. The theoretical analysis and experimental results show that both the output voltage and zero offset drift are much improved by the first-order HBC technique. The experimental results are matched to our theoretical analysis.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kuo Huan Peng, C. M. Uang, and Yih Min Chang "The temperature compensation of the silicon piezoresistive pressure sensor using the half-bridge technique", Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); https://doi.org/10.1117/12.527387
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