Wafer-level-scale package of MEMS device by eutectic bonding method

Sihai Chen; Hong Ma; Mingxiang Chen; Tao Xiong; Sheng Liu; Xinjian Yi

doi:10.1117/12.522834

23 December 2003 Wafer-level scale package of MEMS device by eutectic bonding method

Sihai Chen, Hong Ma, Mingxiang Chen, Tao Xiong, Sheng Liu, Xinjian Yi

Proceedings Volume 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III; (2003) https://doi.org/10.1117/12.522834
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States

Abstract

This paper reports the preliminary results for an on-going program in wafer-level MEMS package. In this particular paper, three closed-loop microheaters of 5μm, 7μm and 9μm width were designed. By reactive ion sputtering technique, two classes of samples were presented. The first one was first co-sputtered with nickel / chromium (Ni/Cr) alloy and then sputtered with gold(Au) metal as heating material; the second one was sputtered with Cr, tin (Sn) and Au respectively as heating material. The bonding of the former sample based on the Ni/Cr and Au heating material failed. The eutectic bonding experiment of the later sample based on the Cr, Sn and Au heating material by global heating method was completed in annealing oven at temperature of about 400 deg. C. for 20 minutes. The SEM testing result showed the eutectic bonding of Au-Sn by global heating was successful. More results will be reported in future.

Citation Download Citation

Sihai Chen, Hong Ma, Mingxiang Chen, Tao Xiong, Sheng Liu, and Xinjian Yi "Wafer-level scale package of MEMS device by eutectic bonding method", Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, (23 December 2003); https://doi.org/10.1117/12.522834

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