Shell model of semiconductor quantum dots

Petr G. Eliseev; Dan P. Popescu; T. V. Torchynska; Andreas Stintz; Kevin J. Malloy

doi:10.1117/12.540313

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18 June 2004 Shell model of semiconductor quantum dots

Petr G. Eliseev, Dan P. Popescu, T. V. Torchynska, Andreas Stintz, Kevin J. Malloy

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Proceedings Volume 5349, Physics and Simulation of Optoelectronic Devices XII; (2004) https://doi.org/10.1117/12.540313
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Model consideration is given to explain observed multi-shell emission spectra from InAs quantum dots embedded in GaAs or InGaAs. The shell model is based on the quantization of kinetic energy of lateral motion of carrier in the dot. 2-D oscillator is calculated on the basis of effective mass approximation. Profiles of inter-level separation are classified into categories that are connected with the lateral confining potential. Comparison is carried with experimental data on InAs/InGaAs quantum dot structures of the DWELL type (dot-in-a-well).

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Petr G. Eliseev, Dan P. Popescu, T. V. Torchynska, Andreas Stintz, and Kevin J. Malloy "Shell model of semiconductor quantum dots", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); https://doi.org/10.1117/12.540313

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