Characterization of Si3N4/SiO2 planar lightwave circuits and ring resonators

Junpeng Guo; G. Allen Vawter; Michael J. Shaw; G. Ronald Hadley; Peter Esherick; Anisha Jain; Charles R Alford; Charles T. Sullivan

doi:10.1117/12.529641

14 June 2004 Characterization of Si₃N₄/SiO₂ planar lightwave circuits and ring resonators

Junpeng Guo, G. Allen Vawter, Michael J. Shaw, G. Ronald Hadley, Peter Esherick, Anisha Jain, Charles R Alford, Charles T. Sullivan

Author Affiliations +

Proceedings Volume 5350, Optical Components and Materials; (2004) https://doi.org/10.1117/12.529641
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

The large refractive index contrast between silicon nitride and silicon dioxide allows silicon nitride/dioxide planar waveguides to have a small mode size and low radiation bending loss compared with doped silicon dioxide waveguides. Small waveguide bend with low radiation loss can help make small integrated planar lightwave circuits (PLCs), and also high-Q waveguide ring resonators. This presentation will talk about the design, fabrication and characterization of low loss silicon nitride/dioxide planar waveguide devices including waveguide bend, waveguide cross, and leaky mode waveguide polarizer. The key contribution of this work is the use of the lateral mode interference (LMI) 3dB splitter to accurately measure the loss of the planar lightwave circuit devices. We will also talk about the waveguide ring resonators with silicon nitride/dioxide materials. The application for photonic biochemical sensors will also be discussed.

Citation Download Citation

Junpeng Guo, G. Allen Vawter, Michael J. Shaw, G. Ronald Hadley, Peter Esherick, Anisha Jain, Charles R Alford, and Charles T. Sullivan "Characterization of Si₃N₄/SiO₂ planar lightwave circuits and ring resonators", Proc. SPIE 5350, Optical Components and Materials, (14 June 2004); https://doi.org/10.1117/12.529641

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