Fabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs

Roman Adam; Martin Mikulics; Shuai Wu; Xuemei Zheng; Michel Marso; I. Camara; F. Siebe; R. Güsten; Arno Foerster; Peter Kordos; Roman Sobolewski

doi:10.1117/12.526429

16 June 2004 Fabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs

Roman Adam, Martin Mikulics, Shuai Wu, Xuemei Zheng, Michel Marso, I. Camara, F. Siebe, R. Güsten, Arno Foerster, Peter Kordos, Roman Sobolewski

Author Affiliations +

Proceedings Volume 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII; (2004) https://doi.org/10.1117/12.526429
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We report on fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs (LT-GaAs). In our experiments, the LT-GaAs/AlAs bilayers were grown on 2-inch diameter, semi-insulating GaAs wafers by a molecular beam epitaxy. Next, the bilayer was patterned to form 10×10 μm² to 150×150 μm² structures using photolithography and ion beam etching. The AlAs layer was then selectively etched in diluted HF solution, and the LT-GaAs device was lifted from its substrate and transferred on top of a variety of substrates including Si, MgO/YBaCuO, Al₂O₃, and a plastic foil. Following the transfer, metallic coplanar transmission lines were fabricated on top of the LT-GaAs structure, forming a metal-semiconductor-metal photodetectors or photomixer structures. Our freestanding devices exhibited above 200 V breakdown voltages and dark currents at 100 V below 3×10^-7 A. Device photoresponse was measured using an electro-optic sampling technique with 100-fs-wide laser pulses at wavelengths of 810 nm and 405 nm as the excitation source. For 810-nm excitation, we measured 0.55 ps-wide electrical transients with voltage amplitudes of up to 1.3 V. The signal amplitude was a linear function of the applied voltage bias, as well as a linear function of the laser excitation power, below well-defined saturation thresholds. Output power from the freestanding photomixers was measured with two-beam laser illumination experimental setup. Reported fabrication technique is suitable for the LT-GaAs integration with a range of semiconducting, superconducting, and organic materials for high-frequency hybrid optoelectronic applications.

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Roman Adam, Martin Mikulics, Shuai Wu, Xuemei Zheng, Michel Marso, I. Camara, F. Siebe, R. Güsten, Arno Foerster, Peter Kordos, and Roman Sobolewski "Fabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs", Proc. SPIE 5352, Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII, (16 June 2004); https://doi.org/10.1117/12.526429

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