Paper
8 June 2004 Determination of the carrier collection efficiency function of Si photodiode using spectral sensitivity measurements
Alexander O. Goushcha, Richard A. Metzler, Chris Hicks, Valery N. Kharkyanen, Natalja M. Berezetska
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Abstract
We present the results of our studies of the quantum efficiency of Si photodiode close to the bandgap and some factors influencing Si photodiode sensitivity. To calculate the carrier collection efficiency function P(x), we used a corrected, explicit expression that takes into account the rear surface reflection of the light [1]. The method of calculation involves solution of the integral equation and allows determination of the carrier collection efficiency function with a high precision. We show that the exact integral equation for P(x) could be often, but not always replaced with the approximations similar to those proposed previously in [2,3]. However, employing the method proposed in this work allows quantifying such factors as e.g. the reflectance of the rear surface of the die and optical scattering within the diffusion layer, which is vital in designing highly efficient Si photodiodes in the near infrared spectral range. 1. C. Hicks, M. Kalatsky, R.A. Metzler, and A.O. Goushcha. Applied Optics, Vol. 42, No. 22. In press 2. L. Werner, J. Fischer, U. Johannsen and J. Hartmann, Metrologia 37, 279-284 (2000). 3. T.R. Gentile, J.M. Houston, and C.L. Cromer, Appl. Opt. 35, 4392-4403 (1996).
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander O. Goushcha, Richard A. Metzler, Chris Hicks, Valery N. Kharkyanen, and Natalja M. Berezetska "Determination of the carrier collection efficiency function of Si photodiode using spectral sensitivity measurements", Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004); https://doi.org/10.1117/12.528361
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KEYWORDS
Photodiodes

Reflectivity

Silicon

Quantum efficiency

Absorption

Crystals

Internal quantum efficiency

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