Trapping mechanisms of persistent photocurrent in GaN-based MSM detectors

Beatrice Poti; Adriana Passaseo; Mauro Lomascolo; Roberto Cingolani; Massimo De Vittorio

doi:10.1117/12.528591

8 June 2004 Trapping mechanisms of persistent photocurrent in GaN-based MSM detectors

Beatrice Poti, Adriana Passaseo, Mauro Lomascolo, Roberto Cingolani, Massimo De Vittorio

Proceedings Volume 5353, Semiconductor Photodetectors; (2004) https://doi.org/10.1117/12.528591
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

The trapping mechanisms at the origin of the persistent photocurrent effects in GaN-based devices have been studied on different time scales by characterizing a low barrier metal-semiconductor-metal GaN-based photodetector in the temperature range between room temperature and 500 K. The active material of the metal-semiconductor-metal device consists of a thin film of GaN grown by metal organic chemical vapour deposition. The Arrhenius plots obtained by the analysis of the decay times of the photocurrent as a function of the temperature on time scales from millisecond up to hours allowed us to calculate the activation energies of the mechanisms responsible for the persistent photocurrent. The activation energies derived from the decay times on the time scale of hours have been attributed to gallium vacancies (VGa), gallium antisites (GaN) and carbon impurities, whereas GaN excitonic resonances resulted to be responsible for the persistent photocurrent on the millisecond time scale. Finally, the influence of the decay times has been correlated with the photocurrent gain of the device, which resulted to be as high as 4.1×10⁵ at RT and 0.85×105 at 450 K.

Citation Download Citation

Beatrice Poti, Adriana Passaseo, Mauro Lomascolo, Roberto Cingolani, and Massimo De Vittorio "Trapping mechanisms of persistent photocurrent in GaN-based MSM detectors", Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004); https://doi.org/10.1117/12.528591

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