Nitrogen doping and p-type conductivity of ZnO films grown by vapor phase epitaxy

Jean-Francois Rommeluere; L. Svob; J. Mimila-Arroyo; S. A. Said Hassani; F. Jomard; G. Amiri; A. Lusson; V. Sallet; Pierre Galtier; Y. Marfaing

doi:10.1117/12.517233

6 July 2004 Nitrogen doping and p-type conductivity of ZnO films grown by vapor phase epitaxy

Jean-Francois Rommeluere, L. Svob, J. Mimila-Arroyo, S. A. Said Hassani, F. Jomard, G. Amiri, A. Lusson, V. Sallet, Pierre Galtier, Y. Marfaing

Author Affiliations +

Proceedings Volume 5359, Quantum Sensing and Nanophotonic Devices; (2004) https://doi.org/10.1117/12.517233
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

The incorporation and electrical activity of nitrogen as an acceptor in ZnO has been investigated. Low temperature Metalorganic Vapor Phase Epitaxy (MOVPE) growth, using diallylamine as nitrogen precursor, yields to incorporation of nitrogen in the range 10¹⁶-10²¹ cm^-3. The electrical activity of nitrogen is demonstrated through the increased compensation of the natural donors with doping level. Close Space Vapor transport (CSVT) and Chemical Vapor Transport (CVT) are found to be less efficient for nitrogen incorporation. This suggests that the use of high temperature growth is a limiting factor for nitrogen incorporation in ZnO. Ex-situ techniques have been tried for both electrical activation and nitrogen incorporation in ZnO. High pressure annealing under oxygen pressure shows a conversion to p-type on nitrogen doped samples grown by MOVPE. Finally, diffusion of nitrogen was carried out on undoped MOVPE layers under high pressure conditions stemming from the decomposition of NH₄NO₃. Conversion to p-type conductivity was observed in a systematic way with measured hole concentrations up to 6.5.10¹⁷ cm^-3. These results suggest that ex-situ treatment can be a practical way to realize p-type ZnO layers.

Citation Download Citation

Jean-Francois Rommeluere, L. Svob, J. Mimila-Arroyo, S. A. Said Hassani, F. Jomard, G. Amiri, A. Lusson, V. Sallet, Pierre Galtier, and Y. Marfaing "Nitrogen doping and p-type conductivity of ZnO films grown by vapor phase epitaxy", Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); https://doi.org/10.1117/12.517233

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available