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9 July 2004 Enhancement of the photoconductivity in 2D photonic macroporous silicon structures
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Abstract
Effects of the enhancement of photoconductivity in 2D photonic macroporus silicon structures were investigated. Dependence of photoconductivity on the angle of incidence of the electromagnetic radiation is observed with maxima at normal incidence of electromagnetic radiation, in the region of the angle of full internal reflection respective to macropore walls and at a grazing angle of incidence respective to the surface of structure. The absolute maximum of photoconductivity is measured at distance between macropores, corresponding to two lengths of the electron free run, i.e. by the maximal transfer of the amplified electric components from a macropore surface in a silicon matrix. Angular dependences of photoconductivity, as well as enhancement of the photoconductivity in comparison with monocrystal silicon, primary absorption p-component of electromagnetic radiation testified to formation of surface electromagnetic waves in illuminated macroporous silicon structures. Its effects result in amplification of a local electric field on a surface of macroporous silicon structure and a macropore surface. The measured value of the built-in electric field on a macropore surface achieves 106 V/cm, the signal photoconductivity amplifies 102 times, and Raman scattering -- up to one order of value.
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Lyudmyla A. Karachevtseva, Mikola I. Karas', Volodimir Onishchenko, and Fiodor Fedorovych Sizov "Enhancement of the photoconductivity in 2D photonic macroporous silicon structures", Proc. SPIE 5360, Photonic Crystal Materials and Devices II, (9 July 2004); https://doi.org/10.1117/12.530446
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