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16 June 2004 Characteristics of InGa(N)As VCSELs for fiber optic applications
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Abstract
We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications in the 1.3 μm range. The epitaxial structures were grown on (100) GaAs substrates by MBE or MOCVD. The nitrogen composition of the InGaNAs/GaAs quantum-well (QW) active region is 0 to 0.02. Long-wavelength (up to 1.3 μm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE and MOCVD-grown VCELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In0.36Ga0.64N0.006As0.994/GaAs VCSELs. The MBE-grown devices were made with intracavity structure. Top-emitting multi-mode 1.3 μm In0.35Ga0.65N0.02As0.98/GaAs VCSELs with 1mW output power have been achieved under RT CW operation. Emission characteristics of InGaNAs/GaAs VCSELs were measured and analyzed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hung-Pin D. Yang, Chen-Ming Lu, Ru-Shang Hsiao, Chih-Hung Chiou, Cheng-Hung Lee, Chun-Yuan Huang, Hsin-Chieh Yu, Chin-May Wang, Kuen Fong Lin, Chih-Ming Lai, Li-Chung Wei, Nikolay A. Maleev, Alexey R. Kovsh, Chia-Pin Sung, Jyh-Shyang Wang, Jenn-Fang Chen, Tsin-Dong Lee, and Jim Y. Chi "Characteristics of InGa(N)As VCSELs for fiber optic applications", Proc. SPIE 5364, Vertical-Cavity Surface-Emitting Lasers VIII, (16 June 2004); https://doi.org/10.1117/12.528157
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