Improvement of high-speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Y. S. Chang; Hao-chung Kuo; Fang-I Lai; Y. A. Chang; Li-Hong Laih; S. C. Wang

doi:10.1117/12.530055

16 June 2004 Improvement of high-speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs

Y. S. Chang, Hao-chung Kuo, Fang-I Lai, Y. A. Chang, Li-Hong Laih, S. C. Wang

Author Affiliations +

Proceedings Volume 5364, Vertical-Cavity Surface-Emitting Lasers VIII; (2004) https://doi.org/10.1117/12.530055
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We present in this paper the MOCVD growth and characterization of high performance 850nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior characteristics, with threshold currents ~0.4 mA, and slope efficiencies ~ 0.6 mW/mA. The threshold current change is less than 0.2 mA and the slope efficiency drops by less than ~30% when the substrate temperature is raised from room temperature to 85°C. These VCSELs also demonstrate high speed modulation bandwidth up to 12.5Gbit/s from 25°C to 85°C.

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Y. S. Chang, Hao-chung Kuo, Fang-I Lai, Y. A. Chang, Li-Hong Laih, and S. C. Wang "Improvement of high-speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWs", Proc. SPIE 5364, Vertical-Cavity Surface-Emitting Lasers VIII, (16 June 2004); https://doi.org/10.1117/12.530055

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