Paper
11 May 2004 1550-nm single-mode grating-outcoupled surface emitting lasers
Steve Patterson, Taha Masood, Nuditha V. Amarasinghe, Scott McWilliams, Duy Phan, Darren Lee, Gary A. Evans, Jerome K. Butler
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Abstract
Single-frequency grating outcoupled surface emitting (GSE) semiconductor lasers emitting at 1550 nm with output powers exceeding 1.6 mW into a multi-mode fiber, threshold currents below 25 mA and with > 30 dB side-mode suppression ratios are reported. These lasers consist of a 500 μm long horizontal cavity, and a 10 μm long second-order outcoupler grating sandwiched between 250 μm long first-order distributed Bragg reflector (DBRs) gratings. Higher output powers can be achieved with longer outcoupler gratings. These GSE lasers operate at 2.5 Gbps and have a full-width at half-maximum (FWHM) beam divergence of 5 x 9 degrees.
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Steve Patterson, Taha Masood, Nuditha V. Amarasinghe, Scott McWilliams, Duy Phan, Darren Lee, Gary A. Evans, and Jerome K. Butler "1550-nm single-mode grating-outcoupled surface emitting lasers", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.530764
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KEYWORDS
Semiconductor lasers

Distributed Bragg reflectors

Laser damage threshold

Multimode fibers

Reflectivity

Etching

Near field

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