High-brightness GaInAs/(Al)GaAs quantum dot tapered lasers at 980 nm with a high wavelength stability

Sophie-Charlotte Auzanneau; Michel Calligaro; Michel Krakowski; Stefan Deubert; Johann Peter Reithmaier; Alfred Forchel

doi:10.1117/12.529060

11 May 2004 High-brightness GaInAs/(Al)GaAs quantum dot tapered lasers at 980 nm with a high wavelength stability

Sophie-Charlotte Auzanneau, Michel Calligaro, Michel Krakowski, Stefan Deubert, Johann Peter Reithmaier, Alfred Forchel

Proceedings Volume 5365, Novel In-Plane Semiconductor Lasers III; (2004) https://doi.org/10.1117/12.529060
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Er or Er/Yb doped fibre amplifiers are key components for high bit rate, WDM, networks. Reliable, high power laser diodes at 980nm are the essential devices for pumping these amplifiers. Applications where a high fibre coupling efficiency is required, demand lasers with high spatial beam quality, a property not inherent to broad area multimode lasers. Tapered lasers are today one of the most interesting solution in terms of high brightness (high power with high spatial beam quality). Furthermore, a reduced temperature shift of the emission wavelength is important for high power optical pump applications because this implies a less stringent temperature control for wavelength adjustment. New GaInAs/(Al)GaAs quantum dot materials exhibit a high wavelength stability vs. current and temperature. Combining these quantum dots as active region and tapered waveguide, we have developed tapered laser diodes with standard AR/HR coatings. This devices showed high optical powers at 980nm with low M² factors in the slow axis. Furthermore, we have measured very low wavelength variations at 20°C with current and with temperature, which is weaker than typical wavelength variations of quantum well lasers.

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Sophie-Charlotte Auzanneau, Michel Calligaro, Michel Krakowski, Stefan Deubert, Johann Peter Reithmaier, and Alfred Forchel "High-brightness GaInAs/(Al)GaAs quantum dot tapered lasers at 980 nm with a high wavelength stability", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.529060

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KEYWORDS

Quantum dots

Semiconductor lasers

High power lasers

Temperature metrology

Laser damage threshold

Laser development

Near field

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