High-speed GaInNAs laser diodes

Masahiko Kondow; Kouji Nakahara; S. Fujisaki; Shigehisa Tanaka; M. Kudo; Tadashi Taniguchi; A. Terano; H. Uchiyama

doi:10.1117/12.533277

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11 May 2004 High-speed GaInNAs laser diodes

Masahiko Kondow, Kouji Nakahara, S. Fujisaki, Shigehisa Tanaka, M. Kudo, Tadashi Taniguchi, A. Terano, H. Uchiyama

Author Affiliations +

Proceedings Volume 5365, Novel In-Plane Semiconductor Lasers III; (2004) https://doi.org/10.1117/12.533277
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

The explosive growth of Internet/intranet traffic has created a strong demand for cost-effective high-speed light-sources to be used in local access networks and data links. The frequency of relaxation oscillation (fr) is a major factor that restricts the high-speed operation of laser diodes. To achieve a high fr, the material of an active layer should have a large differential gain. By using GaInNAs, very deep quantum wells, especially in the conduction band can be formed. Deep quantum wells bring a large differential gain. In this paper, we show how GaInNAs lasers can be applied in this application

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Masahiko Kondow, Kouji Nakahara, S. Fujisaki, Shigehisa Tanaka, M. Kudo, Tadashi Taniguchi, A. Terano, and H. Uchiyama "High-speed GaInNAs laser diodes", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.533277

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