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11 May 2004 High-speed GaInNAs laser diodes
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Abstract
The explosive growth of Internet/intranet traffic has created a strong demand for cost-effective high-speed light-sources to be used in local access networks and data links. The frequency of relaxation oscillation (fr) is a major factor that restricts the high-speed operation of laser diodes. To achieve a high fr, the material of an active layer should have a large differential gain. By using GaInNAs, very deep quantum wells, especially in the conduction band can be formed. Deep quantum wells bring a large differential gain. In this paper, we show how GaInNAs lasers can be applied in this application
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiko Kondow, Kouji Nakahara, S. Fujisaki, Shigehisa Tanaka, M. Kudo, Tadashi Taniguchi, A. Terano, and H. Uchiyama "High-speed GaInNAs laser diodes", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.533277
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