Low-divergence-angle 808-nm GaAlAs/GaAs laser diode using an asymmetric-cladding structure

Zuntu Xu; Wei Gao; Brad Siskavich; Alan Nelson; Lisen Cheng; Kejian Luo; Hyo Sang Kim; Zhiping Wang; Aland K. Chin

doi:10.1117/12.528329

11 May 2004 Low-divergence-angle 808-nm GaAlAs/GaAs laser diode using an asymmetric-cladding structure

Zuntu Xu, Wei Gao, Brad Siskavich, Alan Nelson, Lisen Cheng, Kejian Luo, Hyo Sang Kim, Zhiping Wang, Aland K. Chin

Proceedings Volume 5365, Novel In-Plane Semiconductor Lasers III; (2004) https://doi.org/10.1117/12.528329
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We present a single-mode, 808 nm, AlInGaAs/AlGaAs/GaAs, strained, quantum-well laser with a record low, vertical divergence-angle of 12 degrees and high slope-efficiency of 1.0 W/A. Epitaxial-up mounted devices have operated with no measurable degradation at 150 mW, 50°C for 3500 hours.

Citation Download Citation

Zuntu Xu, Wei Gao, Brad Siskavich, Alan Nelson, Lisen Cheng, Kejian Luo, Hyo Sang Kim, Zhiping Wang, and Aland K. Chin "Low-divergence-angle 808-nm GaAlAs/GaAs laser diode using an asymmetric-cladding structure", Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); https://doi.org/10.1117/12.528329

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available