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21 June 2004 AlGaInP light-emitting diode with metal reflector structure
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A high brightness AlGaInP LED with a high reflectivity metal reflector structure was proposed. The AlGaInP LED layers with metal reflector is bonded to the high thermal conductivity silicon substrate by using indium as a solder. Because the light that would otherwise be absorbed by the opaque GaAs substrate is reflected by the high reflectivity metal reflector, the brightness is significantly improved. The high current operating characteristics are also improved by replacing the GaAs substrate with silicon substrate. The luminous efficiency of the new structure AlGaInP LED can achieve more than 40 lm/W in the dominant wavelength range from 585nm to 625nm.
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Wayne Jan, Tzer-Perng Chen, and Chih-Sung Chang "AlGaInP light-emitting diode with metal reflector structure", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004);

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