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21 June 2004 Light-emitting diodes with integrated omnidirectionally reflective contacts
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Abstract
An electrically conductive omnidirectional reflector (ODR) is demonstrated as p-type ohmic contact for an AlGaInP light-emitting diode (LED). The ODR comprises the semiconductor, a metal layer and an intermediate low-refractive index dielectric layer. The SiO2 dielectric layer, located between a GaP and a silver layer, is perforated by an array of AuZn micro-contacts thus enabling electrical conductivity. It is shown that the ODR-LED has a significantly higher light-extraction efficiency as compared to LEDs employing distributed Bragg reflectors (DBRs). For devices emitting in the red wavelength range, external quantum efficiencies of 18 % and 11 % are obtained for ODR- and DBR-LEDs, respectively. The performance of the ODR-LED can be further increased by replacing the SiO2 dielectric with materials having a refractive index << 1.45. Performance characteristics of such powerful reflectors will be presented.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Gessmann, H. Luo, Jing-Qun Xi, Klaus P. Streubel, and E. Fred Schubert "Light-emitting diodes with integrated omnidirectionally reflective contacts", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); https://doi.org/10.1117/12.527952
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