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21 June 2004 Materials and structural design of a mid-infrared light-emitting device
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An optically pumped emitter for the mid-infrared region around 4 µm based on narrow gap semiconductors is demonstrated. The pumping takes place in the near-infrared around 1 μm and the radiation is converted by the narrow ap semiconductor into the MIR region as spontaneous emission. IV-VI lead chalcogenide-based compounds, especially PbSe and III-V InAsSb-based quantum well systems are applied for frequency conversion. These materials are grown by MBE and characterized mainly by photo luminescence spectroscopy. For a high radiation efficiency the outcoupling of the light is enhanced by surface structuring. Useful structures generating high photoluminescence intensity are characterized by IR imaging with an IR camera system being sensitive in the spectral region of interest.
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Fritz Weik, Jens W. Tomm, Regine Glatthaar, Uwe Vetter, Dirk Szewczyk, Joachim Nurnus, Armin Lambrecht, Markus Grau, Ralf Meyer, Markus C. Amann, Bernd Spellenberg, and Michael Bassler "Materials and structural design of a mid-infrared light-emitting device", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004);

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