Novel LEDs using unique lateral p-n junctions on GaAs (311)A patterned substrates

Nethaji Dharmarasu; Pablo Oscar Vaccaro; Shanmugam Saravanan; Jose Maria Zanardi Ocampo; Kazuyoshi Kubota; Nobuo Saito

doi:10.1117/12.547116

21 June 2004 Novel LEDs using unique lateral p-n junctions on GaAs (311)A patterned substrates

Nethaji Dharmarasu, Pablo Oscar Vaccaro, Shanmugam Saravanan, Jose Maria Zanardi Ocampo, Kazuyoshi Kubota, Nobuo Saito

Proceedings Volume 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII; (2004) https://doi.org/10.1117/12.547116
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We report the high-density light-emitting diodes (LEDs) using lateral junction for LED printer and other applications. Semi-insulating GaAs (311)A substrates were patterned to create (100) sidewall. GaAs/AlxGa1-xAs epilayers were grown on the patterned substrate using the amphoteric silicon as a dopant, which forms the lateral p-n junction. For the first time, high-density (2400 dots per inch) LED arrays were fabricated using the lateral junction with device width of 10.6 micron. Light emission spectrum shows a single peak at a wavelength of 813 nm with FWHM of 56 nm at room temperature. The same method can be used to fabricate LED arrays with higher device densities for applications in high resolution LED printers, displays and other applications.

Citation Download Citation

Nethaji Dharmarasu, Pablo Oscar Vaccaro, Shanmugam Saravanan, Jose Maria Zanardi Ocampo, Kazuyoshi Kubota, and Nobuo Saito "Novel LEDs using unique lateral p-n junctions on GaAs (311)A patterned substrates", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); https://doi.org/10.1117/12.547116

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