Effect of absorber material and mask pattern correction on pattern fidelity in EUV lithography

Minoru Sugawara; Takeo Hashimoto; Iwao Nishiyama

doi:10.1117/12.534981

20 May 2004 Effect of absorber material and mask pattern correction on pattern fidelity in EUV lithography

Minoru Sugawara, Takeo Hashimoto, Iwao Nishiyama

Proceedings Volume 5374, Emerging Lithographic Technologies VIII; (2004) https://doi.org/10.1117/12.534981
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The printability of a dense line pattern and a model pattern using two configurations of absorber and buffer materials for the mask were examined through simulations. An absorber material with a small extinction coefficient of 0.025 must be thicker than one with a large extinction coefficient fo 0.040 to ensure sufficient reflectance contrast. However, a thick absorber enhances the adverse influence of off-axis incidence on the critical dimensions and pattern fidelity of a dense pattern layout, and the influence increases markedly when the incident angle is over 6.2°. Thus, and absorber material with a large extinction coefficient is advantageous in reducing the influence of off-axis incidence because it allows the use of a thinner layer. Another approach to reducing this influence is mask pattern correction. A newly developed algorithm makes the mask near-field energy for off-axis incidence the same as that for normal incidence. This simple correction compensates effectively for the influence of off-axis incidence and provides excellent pattern fidelity. The algorithm enable the use of absorber and buffer materials with a small extinction coefficient and also a large incident angle of over 6.2°.

Citation Download Citation

Minoru Sugawara, Takeo Hashimoto, and Iwao Nishiyama "Effect of absorber material and mask pattern correction on pattern fidelity in EUV lithography", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.534981

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