Evaluation of contamination deposition on pinholes used in EUV at-wavelength PDI

Katsumi Sugisaki; Masanobu Hasegawa; Seima Kato; Chidane Ouchi; Jun Saito; Masahito Niibe; Akiyoshi Suzuki; Katsuhiko Murakami

doi:10.1117/12.537344

20 May 2004 Evaluation of contamination deposition on pinholes used in EUV at-wavelength PDI

Katsumi Sugisaki, Masanobu Hasegawa, Seima Kato, Chidane Ouchi, Jun Saito, Masahito Niibe, Akiyoshi Suzuki, Katsuhiko Murakami

Author Affiliations +

Proceedings Volume 5374, Emerging Lithographic Technologies VIII; (2004) https://doi.org/10.1117/12.537344
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Point diffraction interferometry (PDI) is a promising candidate of the wavefront metrology for EUV lithographic projection optics. However, the pinhole used in the PDI is easily filled up with carbon contamination induced by EUV irradiation. We have evaluated the filling rate of pinholes by measuring decreasing rates of intensity of EUV radiation that passed through the pinholes. As a result, we found the filling rates of the pinholes depend on their materials and blowing of the oxygen. The filling rate was the slowest when the pinhole made of Ni was used and oxygen was blown.

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Katsumi Sugisaki, Masanobu Hasegawa, Seima Kato, Chidane Ouchi, Jun Saito, Masahito Niibe, Akiyoshi Suzuki, and Katsuhiko Murakami "Evaluation of contamination deposition on pinholes used in EUV at-wavelength PDI", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.537344

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