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20 May 2004 Evaporated resist for the fabrication and replication of LEEPL mask
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Masks for low energy electron proximity projection lithography (LEEPL) require thin membranes, which in turn make the development of low-distortion masks a critical issue for this technology. By using an evaporated resist, a flip side fabrication process is presented here in which mask patterning is carried out with the mask in the same orientation that it will have in the stepper. This new process reduces distortions of a typical LEEPL mask which usually requires patterning on the opposite side of the membrane causing a gravitational sag effects. In addition, an evaporated resist has significant advantages for mask fabrication as membrane distortion is reduced due to the absence of centrifugal force during the resist deposition process. Uniform heat distribution across the membrane during the etching process is also expected since the membrane can now be placed in direct contact with a cooled metal electrode, thereby improving the etch rate uniformity. Also, for large scale production, several mask replicates from the original mask must be made because they have limited lifetime when used in a stepper. Image placement distortion can be minimized and the yield can be improved in mask replication by using an evaporated resist.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Melanie Cloutier, Yousef Awad, Eric Lavallee, David Turcotte, Jacques Beauvais, Dominique Drouin, Lau Kien Mun, Pan Yang, Pierre Lafrance, Ron Legario, Akira Yoshida, and Hiroshi Nozue "Evaporated resist for the fabrication and replication of LEEPL mask", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004);


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