Paper
20 May 2004 LEEPL (low-energy electron beam proximity-projection lithography) overlay status
Norifumi S. Nakajima, Takuji Atarashi, Hiroyuki Sakai, Toyoji Fukui, Hideaki Takano, Daizo Amano
Author Affiliations +
Abstract
The image placement (IP) error correction is one of the advantages for E-beam lithography tool. LEEPL (Low Energy Electron beam Proximity-projection Lithography) 1,2) which is using stencil mask is able to shift the mask patter image by e-beam angle control. To use this unique technique week point of the stencil mask distortion is compensated. The flexibility of LEEPL E-beam IP correction for over lay is evaluated. The LEEPL E-beam IP correction is done by Sub-Deflector beam control. The feature to improve the over lay accuracy is introduced. It is not only for Mask IP error correction but also for Mask distortion by holding, under layer shot distortion and wafer chucking distortion.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norifumi S. Nakajima, Takuji Atarashi, Hiroyuki Sakai, Toyoji Fukui, Hideaki Takano, and Daizo Amano "LEEPL (low-energy electron beam proximity-projection lithography) overlay status", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.536229
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Distortion

Photomasks

Semiconducting wafers

Charged-particle lithography

Optical alignment

Electron beam lithography

Electron beams

RELATED CONTENT


Back to Top