Paper
20 May 2004 Total performance of Nikon EB stepper R&D tool
Tomoharu Fujiwara, Noriyuki Hirayanagi, Jin Udagawa, Junji Ikeda, Sumito Shimizu, Hidekazu Takekoshi, Kazuaki Suzuki
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Abstract
The development of Electron Projection Lithography (EPL) has proceeded for more than 10 years since its first description. EPL is regarded as a practical technology for 65 nm technology node and below. Nikon has been developing an EPL tool, named as the EB stepper. NSR-EB1A is the first EPL tool that has full functions for practical R&D use such as dynamic exposure by combination of electron beam deflection and stage scanning, wafer alignment, and so on. Some features of the EB stepper, which uses a 100 kV electron beam, are high resolution, and a large process margin associated with large depth of focus (DOF). Large DOF is a major feature of electron beam lithography. In the previous paper, we reported data of dynamic resolution and subfield stitching accuracy as preliminary performances that were obtained by NSR-EB1A. Recently the development of EPL reticle is significantly progressed. Today, high quality 200 mm diameter EPL reticle is available from plural mask suppliers. Using 200mm EPL reticle, we achieved subfield stitching accuracy about 20nm (3s). And we also evaluated total performance such as CD uniformity, overlay accuracy. This paper reports the latest performance of NSR-EB1A.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomoharu Fujiwara, Noriyuki Hirayanagi, Jin Udagawa, Junji Ikeda, Sumito Shimizu, Hidekazu Takekoshi, and Kazuaki Suzuki "Total performance of Nikon EB stepper R&D tool", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.537008
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Cited by 1 scholarly publication.
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KEYWORDS
Reticles

Semiconducting wafers

Electron beams

Distortion

Electron beam lithography

Interferometers

Optical alignment

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