Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists

Monique Ercken; Leonardus Hendrikus Albertino Leunissen; Ivan Pollentier; George P. Patsis; Vassilios Constantoudis; Evangelos Gogolides

doi:10.1117/12.537339

24 May 2004 Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists

Monique Ercken, Leonardus Hendrikus Albertino Leunissen, Ivan Pollentier, George P. Patsis, Vassilios Constantoudis, Evangelos Gogolides

Author Affiliations +

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.537339
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The control and minimization of resist line edge (or width) roughness (LER or LWR) is increasing in importance. It requires first a complete and reliable characterization scheme of LER, including frequency dependency, and then an investigation and understanding of its origins and methods for improvement. A new characterization method, introduced by Demokritos and based on the offline analysis of top-down SEM pictures, has been evaluated and compared to more conventional inline measurements. This enables us to include additional parameters that quantify the spatial aspects of LER, next to the classical LER 3σ value. The spatial frequency dependence can also be determined from the inline measurements. Both techniques are applied to several test cases: the impact on LER of changing softbake (SB) and post-exposure bake (PEB) temperature, and changing aerial image contrast (AIC). Also, the improvements in an etch optimization experiment are quantified. The majority of the work is concentrating on 193nm resists, but initial experiments with a 157nm resist will be shown. This work has led to a better understanding of some of the contributors to line edge roughness and gives the possibility to quantify process improvements in a better way.

Citation Download Citation

Monique Ercken, Leonardus Hendrikus Albertino Leunissen, Ivan Pollentier, George P. Patsis, Vassilios Constantoudis, and Evangelos Gogolides "Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.537339

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available