Lithography process window analysis with calibrated model

Wenzhan Zhou; Jin Yu; James Lo; Johnson Liu

doi:10.1117/12.532719

24 May 2004 Lithography process window analysis with calibrated model

Wenzhan Zhou, Jin Yu, James Lo, Johnson Liu

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.532719
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

As critical-dimension shrink below 0.13 μm, the SPC (Statistical Process Control) based on CD (Critical Dimension) control in lithography process becomes more difficult. Increasing requirements of a shrinking process window have called on the need for more accurate decision of process window center. However in practical fabrication, we found that systematic error introduced by metrology and/or resist process can significantly impact the process window analysis result. Especially, when the simple polynomial functions are used to fit the lithographic data from focus exposure matrix (FEM), the model will fit these systematic errors rather than filter them out. This will definitely impact the process window analysis and determination of the best process condition. In this paper, we proposed to use a calibrated first principle model to do process window analysis. With this method, the systematic metrology error can be filtered out efficiently and give a more reasonable window analysis result.

Citation Download Citation

Wenzhan Zhou, Jin Yu, James Lo, and Johnson Liu "Lithography process window analysis with calibrated model", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.532719

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