Paper
24 May 2004 Overlay measurement tool up to 70-nm design rule
Tatsuo Fukui, Hiroshi Aoki, Takeshi Endo, Tomoaki Yamada
Author Affiliations +
Abstract
With the refined lithography techniques that exist today, it is critical for overlay measurement tools to perform with great measurement precision. Tool induced shift, TIS, is one of the key factors taken into consideration when evaluating the performance of an overlay measurement tool. TIS can be observed as a numerical value, and the measurement value is corrected by the TIS value. However, in an overlay measurement tool with TIS, the measured values could be shifted due to an interaction between TIS and a film stack structure of wafer. Therefore, it is essential to minimize the TIS values. We extend our study on the lens surface aspheric error, which is known to be one of the root causes of TIS. As this point of view, we constructed our overlay measurement tool, NRM-3100, and were able to decrease TIS values.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsuo Fukui, Hiroshi Aoki, Takeshi Endo, and Tomoaki Yamada "Overlay measurement tool up to 70-nm design rule", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.535007
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CITATIONS
Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Overlay metrology

Aspheric lenses

Distortion

Semiconducting wafers

Etching

Lithography

Monochromatic aberrations

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