Prospects for using primary electron-based CD metrology

Bryan J. Rice; Gary L. Crays; Alex Danilevsky; Michael G. Grumski; Shunsuke Koshihara; Tadashi Otaka; Jeanette M. Roberts

doi:10.1117/12.544232

24 May 2004 Prospects for using primary electron-based CD metrology

Bryan J. Rice, Gary L. Crays, Alex Danilevsky, Michael G. Grumski, Shunsuke Koshihara, Tadashi Otaka, Jeanette M. Roberts

Author Affiliations +

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.544232
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

CD SEM’s used for CD Metrology in semiconductor fabs rely upon secondary electron emission to indirectly image features on process wafers. The use of secondary electrons by current CD SEM technology limits the resolution of this metrology and hinders its ability to meet future requirements. An idea that has garnered some interest from both the research and commercial sectors is to use backscattered, or primary, electrons with very low energy losses to image patterned features directly. Such a device would operate with acceleration (and landing) potentials in the range of 50 keV-200 keV. One concern is whether the high energy incident electrons will damage active devices. It has been hypothesized that the substrate’s reduced stopping power for high energy electrons will result in the majority of the electron energy being deposited far below the device structures. We have explored the issue of device damage from high energy and high dose incident electrons and find that this technique results in unacceptable transistor degradation at all of the doses and landing energies explored. We present our findings in this paper.

Citation Download Citation

Bryan J. Rice, Gary L. Crays, Alex Danilevsky, Michael G. Grumski, Shunsuke Koshihara, Tadashi Otaka, and Jeanette M. Roberts "Prospects for using primary electron-based CD metrology", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.544232

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available