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24 May 2004 Reticle surface contaminants and their relationship to sub-pellicle defect formation
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DUV lithography induced sub-pellicle particle formation continues to be a significant problem in semiconductor fabs. We have previously reported on the identification of various defects detected on reticles after extended use. This paper provides a comprehensive evaluation of various molecular contaminants found on the backside surface of a reticle used in high-volume production. Previously all or most of the photo-induced contaminants were detected under the pellicle. This particular contamination is a white “haze” detected by pre-exposure inspection using KLA-Tencor TeraStar STARlight with Un-patterned Reticle Surface Analysis, (URSA). Chemical analysis was done using Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) and Raman spectroscopy.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian J. Grenon, Kaustuve Bhattacharyya, William Waters Volk, Khoi A. Phan, and Andre Poock "Reticle surface contaminants and their relationship to sub-pellicle defect formation", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004);

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