Reticle surface contaminants and their relationship to sub-pellicle defect formation

Brian J. Grenon; Kaustuve Bhattacharyya; William Waters Volk; Khoi A. Phan; Andre Poock

doi:10.1117/12.536584

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24 May 2004 Reticle surface contaminants and their relationship to sub-pellicle defect formation

Brian J. Grenon, Kaustuve Bhattacharyya, William Waters Volk, Khoi A. Phan, Andre Poock

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Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.536584
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

DUV lithography induced sub-pellicle particle formation continues to be a significant problem in semiconductor fabs. We have previously reported on the identification of various defects detected on reticles after extended use. This paper provides a comprehensive evaluation of various molecular contaminants found on the backside surface of a reticle used in high-volume production. Previously all or most of the photo-induced contaminants were detected under the pellicle. This particular contamination is a white “haze” detected by pre-exposure inspection using KLA-Tencor TeraStar STARlight with Un-patterned Reticle Surface Analysis, (URSA). Chemical analysis was done using Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) and Raman spectroscopy.

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Brian J. Grenon, Kaustuve Bhattacharyya, William Waters Volk, Khoi A. Phan, and Andre Poock "Reticle surface contaminants and their relationship to sub-pellicle defect formation", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.536584

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