Scatterometry feasibility studies for 0.13-micron flash memory lithography applications: enabling integrated metrology

Kevin R. Lensing; Clint Miller; Geoff Chudleigh; Bryan Swain; Michael Laughery; Anita Viswanathan

doi:10.1117/12.533813

24 May 2004 Scatterometry feasibility studies for 0.13-micron flash memory lithography applications: enabling integrated metrology

Kevin R. Lensing, Clint Miller, Geoff Chudleigh, Bryan Swain, Michael Laughery, Anita Viswanathan

Author Affiliations +

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.533813
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

A series of experiments were performed to determine if the ThermaWave INTEGRA CCDi reflectometer combined with Timbre Technologies’ Optical Digital Profiler (ODP) software could meet the requirements for lithography cell integration and process control of critical 0.13-micron Flash memory applications. Shallow Trench Isolation (STI), First Poly Gate, Stacked Gate and Aluminum Interconnect layers were examined as a part of this study. ODP models were developed for each of these applications and their output was compared to Critical Dimension Scanning Electron Microscopy (CDSEM) and cross-section SEM to demonstrate adequate correlation to incumbent metrology techniques. ODP is shown herein to correlate to CDSEM while providing the throughput required to measure every wafer without creating a bottleneck for the lithography cell. Experimental results also suggest that, in many cases, ODP can deliver profile determination beyond the fundamental capability of standard in-line metrology techniques.

Citation Download Citation

Kevin R. Lensing, Clint Miller, Geoff Chudleigh, Bryan Swain, Michael Laughery, and Anita Viswanathan "Scatterometry feasibility studies for 0.13-micron flash memory lithography applications: enabling integrated metrology", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.533813

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