Successful application of angular scatterometry to process control in sub-100-nm DRAM device

Jin-ah Kim; Seong-Jin Kim; Soo-Bok Chin; Seok-Hwan Oh; Doo-Hoon Goo; Suk-Joo Lee; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han; Joo-Tae Moon; Christopher J. Raymond; Michael E. Littau; Byungjoo James Youn; Chang-Jin Sohn

doi:10.1117/12.536312

24 May 2004 Successful application of angular scatterometry to process control in sub-100-nm DRAM device

Jin-ah Kim, Seong-Jin Kim, Soo-Bok Chin, Seok-Hwan Oh, Doo-Hoon Goo, Suk-Joo Lee, Sang-Gyun Woo, Han-Ku Cho, Woo-Sung Han, Joo-Tae Moon, Christopher J. Raymond, Michael E. Littau, Byungjoo James Youn, Chang-Jin Sohn

Author Affiliations +

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.536312
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

As DRAM (Dynamic Random Access Memory) device continuously decreases in chip size, an increased speed and more accurate metrology technique is needed to measure CD (critical dimension), film thickness and vertical profile. Scatterometry is an optical metrology technique based on the analysis of scattered (or diffracted) light from periodic line and space grating and uses 2θ angular method (ACCENT Optical Technologies CDS-200). When a light source is irradiated into the periodic pattern, the scattered intensity signal of zero-th order as a function of incident angle is measured. By analyzing these scattered signals, various parameters of the periodic pattern such as CD, vertical profile, mapping of substrate structure, film thickness and sidewall angle can be determined. Advantages of scatterometry are that drastic decreased measuring time and acquirement of CD, vertical profile, film thickness and sidewall angle by just one measurement. In this paper we will discuss various applications of scatterometry to sub-100nm DRAM structures of straight line and space and curved line and space patterns. Details of the correlation with CD-SEM (Scanning Electron Microscope) of standard metrology tool and repeatability of measured CD values will be discussed. As diverse applications, results of in-field, in-wafer and wafer-to-wafer CD monitoring, STI (Shallow Trench Isolation) depth monitoring and matching of vertical profile with V-SEM (Vertical SEM) will be also presented.

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Jin-ah Kim, Seong-Jin Kim, Soo-Bok Chin, Seok-Hwan Oh, Doo-Hoon Goo, Suk-Joo Lee, Sang-Gyun Woo, Han-Ku Cho, Woo-Sung Han, Joo-Tae Moon, Christopher J. Raymond, Michael E. Littau, Byungjoo James Youn, and Chang-Jin Sohn "Successful application of angular scatterometry to process control in sub-100-nm DRAM device", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.536312

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