Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography

Takuya Hagiwara; Takamitsu Furukawa; Toshiro Itani; Kiyoshi Fujii; Takuji Ishikawa; Meiten Koh; Tetsuhiro Kodani; Tsukasa Moriya; Tsuneo Yamashita; Takayuki Araki; Minoru Toriumi; Hirokazu Aoyama

doi:10.1117/12.535098

14 May 2004 Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography

Takuya Hagiwara, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii, Takuji Ishikawa, Meiten Koh, Tetsuhiro Kodani, Tsukasa Moriya, Tsuneo Yamashita, Takayuki Araki, Minoru Toriumi, Hirokazu Aoyama

Author Affiliations +

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.535098
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Fluoropolymers are key materials in the single-layer resists used in 157-nm lithography. We have been studying fluoropolymers to determine their potential use as base resins. These polymers are main-chain fluorinated polymers synthesized by co-polymerizing tetrafluoroethylene (TFE) and functional norbornene. We developed a new polymer that is highly transparent and has high dry-etching resistance by attaching a PG-F protecting group, which has high dry-etching resistance, to a TFE/norbornene-based fluorinated polymer. The dry-etching rate for the 15 % blocked polymer was 1.50 times that of a KrF resist and its absorption coefficient at a 157-nm-exposure wavelength was 1.06 /μm. We introduced various photoacid generators (PAGs) to the polymer, and compared lithographic performance. As a result, we found polymer with a triphenylsulfonium-salts-based PAG had a good pattern profile, and polymer with a high-acidity PAG resolved a fine pattern. In particular, polymer with a triphenylsulfonium perfluorooctane sulfonate PAG was able to resolve a 60-nm line and space pattern. We then added various quenchers to the polymer and the PAG, and compared pattern profiles. We found that the use of a high-basicity quencher improved the resolution of the resist and line edge roughness. Consequently, that the polymer with the triphenylsulfonium perfluorooctane sulfonate PAG and tributylamine quencher could resolve a 55-nm line and space pattern. These results provided guidelines for choosing the PAG and quencher for this polymer.

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Takuya Hagiwara, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii, Takuji Ishikawa, Meiten Koh, Tetsuhiro Kodani, Tsukasa Moriya, Tsuneo Yamashita, Takayuki Araki, Minoru Toriumi, and Hirokazu Aoyama "Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535098

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