E-beam proximity effect parameters for sub-100nm features

Keith R Mountfield; Andrew R. Eckert; XiaoMin Yang; Earl C. Johns

doi:10.1117/12.535766

14 May 2004 E-beam proximity effect parameters for sub-100-nm features

Keith R Mountfield, Andrew R. Eckert, XiaoMin Yang, Earl C. Johns

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.535766
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Understanding the proximity effect is crucial to fabricating repeatable sub-100 nm features for magnetic recording devices. Top down CD-SEM measurements have been used to measure the proximity effect parameters in negative and positive resists at dimensions below 100 nm. The goal of this work is to experimentally determine the values of the parameters α, β and η and what they depend on.

Citation Download Citation

Keith R Mountfield, Andrew R. Eckert, XiaoMin Yang, and Earl C. Johns "E-beam proximity effect parameters for sub-100-nm features", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535766

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