Paper
14 May 2004 Fast resist modeling and its application in 193-nm lithography
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Abstract
A new resist threshold model based on image behaviors on directions parallel as well as normal to feature edges has been developed for predicting critical dimensions (CD) of two-dimension patterns. In this new model (2D-RTM), resist threshold is assumed as a second-order polynomial function of five image parameters that consist of image intensity and slope. Extensive verifications of 2D-RTM have been done by using both rigorous resist models and experimental measurements. 2D-RTM is found to be a good approximation of rigorous model within certain range of dose and defocus variation. For 130nm technology in LSI Logic, 2D-RTM improves CD prediction accuracy for typical 2D patterns to a maximum error of 3.1nm and average of 1.21nm, which gives an improvement of a factor of two compared with conventional resist threshold model.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Yuan, Andrew R. Neureuther, and Ebo H. Croffie "Fast resist modeling and its application in 193-nm lithography", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535564
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Cited by 1 scholarly publication.
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KEYWORDS
Model-based design

Diffusion

Cadmium

Optical proximity correction

Logic

193nm lithography

Scanning electron microscopy

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